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Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-220C package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13009 Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IE IEM IB IBM PD Tj Tstg IN Collector-base voltage Collector-emitter voltage PARAMETER Emitter-base voltage Collector current (DC) Collector current-Peak CHA E SEM NG Open base Open emitter Open collector OND IC CONDITIONS TOR UC VALUE 700 400 9 12 24 18 36 6 12 UNIT V V V A A A A A A W Emitter current Emitter current-Peak Base current Base current-Peak Ta=25ae Total power dissipation TC=25ae Junction temperature Storage temperature 2 100 150 -65~150 ae ae THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA; IB=0 IC=5A; IB=1A IC=8A ;IB=1.6A TC=100ae IC=12A; IB=3A IC=5A; IB=1A IC=8A; IB=1.6A TC=100ae VCEV=Rated value, VBE(off)=1.5V dc;TC=100ae VEB=9V; IC=0 IC=5A ; VCE=5V IC=8A ; VCE=5V 8 6 MIN 400 MJE13009 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICEV IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 1.0 1.5 2.0 3.0 1.2 1.6 1.5 1.0 5.0 1.0 V V V V V mA mA Rise time Transition frequency Collector outoput capacitance Switching times resistive load td tr ts tf Delay time INC Fall time E SEM ANG H IC=0.5A ; VCE=10V;f=1MHz IE=0; f=0.1MHz ; VCB=10V OND IC TOR UC 30 4 180 0.06 0.45 1.30 0.20 0.1 1.0 3.0 0.7 40 MHz pF |I |I |I |I s s s s Storage time VCC=125V ,IC=8A IB1=-IB2=1.6A tp=25|I s duty cycleU 1% 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJE13009 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance: 0.10mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 CHA IN E SEM NG OND IC TOR UC 4 Inchange Semiconductor Product Specification Silicon NPN Power Transistors MJE13009 CHA IN E SEM NG OND IC TOR UC 5 |
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